Forthcoming talks:

(Invited) H. Zhao, “MOCVD epitaxy and doping for beta-Ga2O3 and (AlxGa1-x)2O3”, Oxide-based Materials and Devices XI, SPIE Photonics West, San Francisco, CA, Feb. 2020.

(Invited) H. Zhao, “MOCVD epitaxy and doping for β-Ga2O3 and (AlxGa1-x)2O3”, the 47th Conference on the Physics and Chemistry of Surfaces and Interfaces (PCSI-47), Boulder, Colorado, Jan. 2020.

2019

Invited talks:

Chris G. Van de Walle, “Defects and transport in oxide heterostructures”, March Meeting of the American Physical Society Boston, MA, March 4-8, 2019.

Chris G. Van de Walle, “First-Principles Modeling of Oxides”, GraFOx (Growth and Fundamentals of Oxides for Electronic Applications) Summer School, German-Italian Center for European Excellence, Villa Vigoni, Menaggio, Italy, June 3-9, 2019.

Chris G. Van de Walle, “Unusual Structures of Point Defects and Impurities in Sesquioxides”, 6th International Symposium on Advanced Microscopy and Theoretical Calculations (AMTC6), Nagoya, Japan, June 14-15, 2019.

Chris G. Van de Walle, “First-principles studies of Ga2O3: defects, doping, and heterostructures”, 3rd International Workshop on Gallium Oxide and Related Materials (IWGO-3), The Ohio State University, Columbus, Ohio, August 12-15, 2019.

Chris G. Van de Walle, “Fundamental limits on transparency of transparent conducting oxides”, Transparent Conductive Oxides—Fundamentals and Applications (TCO2019), Leipzig, Germany, September 23-27, 2019.

H. Zhao, “CVD Growth of β-Ga2O3”, Third Ultra-Wide-Bandgap Workshop, Aldephi, MD, May 2019.

H. Zhao, β-Ga2O3: Materials and devices, Oxide Symposium, SPIE Photonics West, San Francisco, CA, Feb. 2019

Jim Speck, "Development of β-(AlxGa1-x)2O3/Ga2O3 Heterostructures", GOMACTECH 2019 (Albuquerque, USA).

Jim Speck, "Gallium Oxide Materials Science and Engineering - GAME MURI", IWGO 2019 (Columbus, USA).

Akhil Mauze, Yuewei Zhang, Takeki Itoh, Feng Wu, and James Speck, "Metal Oxide Catalyzed Epitaxy (MOCATAXY) Growth and Sn Doping of β-Ga2O3", TCO 2019 (Liepzig, Germany):.

Yuewei Zhang, Akhil Mauze, Fikadu Alema, Andrei Osinsky, and James Speck, "Anisotropic wet etching of β-Ga2O3 and its application in lateral Schottky barrier diodes", ICCGE 2019 (Denver, USA).

Y. Zhang, A. Mauze, E. Ahmadi, Y. Oshima, S.-H. Han, A. Mauze, S. Kaun, J. Hogan, F. Wu, H. Okumura, and J.S. Speck, "Progress in MBE Growth of β-Ga2O3: Doping and Heterostructures", Photonics West 2019 (San Francisco, USA).

Yuewei Zhang, Akhil Mauze, Fikadu Alema, Andrei Osinsky, and James Speck, "Anisotropic wet etching of β-Ga2O3 and its application in lateral Schottky barrier diodes", AVS 2019 (Columbus, USA).

Contributed talks:

Hartwin Peelaers, John L. Lyons, Joel B. Varley, and Chris G. Van de Walle, "Deep acceptors in Ga2O3", March Meeting of the American Physical Society Boston, MA, March 4-8, 2019.

Compound Semiconductor Week 2019 (Nara, Japan): (010) β-Ga2O3 Metal Oxide Catalyzed Epitaxy (MOCATAXY) growth and Sn doping in plasma-assisted molecular beam epitaxy. Akhil Mauze, Yuewei Zhang, and James Speck. *Best Student Paper Award Winner

Compound Semiconductor Week 2019 (Nara, Japan): Investigation of Fe incorporation in (010) β-Ga2O3 films grown by plasma-assisted molecular beam epitaxy. Akhil Mauze, Yuewei Zhang, Tom Mates, and James Speck

Akhil Mauze, Yuewei Zhang, Tom Mates, Feng Wu, and James Speck, "Acceptors in (010) β-Ga2O3 grown by plasma-assisted molecular beam epitaxy", IWGO 2019 (Columbus, USA).

Yuewei Zhang, Akhil Mauze, Fikadu Alema, Andrei Osinsky, and James Speck, "Anisotropic wet etching of β-Ga2O3 and its application in lateral Schottky barrier diodes", IWGO 2019 (Columbus, USA).

Jared M. Johnson, Zhen Chen, Joel B. Varley, Christine M. Jackson, Aaron Arehart, Steven A. Ringel, Chris G. Van de Walle, David A. Muller, and Jinwoo Hwang, “Direct observation of interstitial-divacancy complexes in β -Ga2O3 using atomic resolution scanning transmission electron microscopy”, Frontiers of Electron Microscopy and Materials Science, Asheville, NC, September 2019.

Jinwoo Hwang, "Direct Determination of Point Defects and Complexes in β-Ga2O3 Using Scanning Transmission Electron Microscopy", IWGO 2019, Columbus, OH, August 2019.

Jared Johnson, "Atomic Scale Investigation of Substitutional Alloying in β-(InxGa1-x)2O3 and β-(AlxGa1-x)2O3”, IWGO 2019, Columbus, OH, August 2019.

Jared Johnson, Zhen Chen, Joel B. Varley, Christine Jackson, Farzana Esmat, Aaron R. Arehart, Hsien Lien Huang, Steven A. Ringel, Chris G. Van de Walle, David Muller and Jinwoo Hwang “Atomic scale characterization of point defects and their complexes in β-Ga2O3 using scanning transmission electron microscopy”, Electronic Materials Conference, Ann Arbor, Michigan, June 2019.

H. Gao, S. Muralidharan, M. Karim, S. M. White, C. R. Lei, K. Leedy, H. Zhao, D. Look, L. J. Brillson, “Neutron Irradiation and Thermal Anneal Impact on Ga2O3 Deep Level Defects”, IWGO 2019, Columbus, OH, Aug. 2019.

H. Ghadi, C. M. Jackson, E. Farzana, J. F. McGlone, Z. Feng, A Bhuiyan, H. Zhao, A. R. Arehart, S. A. Ringel, “Full-Bandgap Investigation of Electronic Defect States in High-Mobility MOCVD-Grown (010) β-Ga2O3”, IWGO 2019, Columbus, OH, Aug. 2019.

Z. Xia, W. Moore, A Bhuiyan, Z. Feng, C. Wang, H. Chandrasekar, A. Lee, N. Kalarickal, F. Yang, H. Zhao, S. Rajan, “Metal/BaTiO3/β-Ga2O3 Dielectric Heterojunction Diode with 5.7 MV/cm Breakdown Field”, IWGO 2019, Columbus, OH, Aug. 2019.

J. A. Freitas, Jr., Z. Feng, N. Nepal, J. C. Culbertson, M. J. Tadjer, H. Zhao, “Insights on oxygen vacancies in Ga2O3 epitaxial films”, IWGO 2019, Columbus, OH, Aug. 2019.

Z. Feng, A Bhuiyan, M. Karim, H. Zhao, “MOCVD Epitaxy of Si-doped β-Ga2O3 Thin Films with Record High Electron Mobilities”, IWGO 2019, Columbus, OH, Aug. 2019. (Best student paper award)

A Bhuiyan, Z. Feng, Z. Chen, J. Johnson, H.-L. Huang, J. Hwang, H. Zhao, “MOCVD Growth of β-(AlxGa1−x)2O3 Thin Films on Ga2O3 Substrates”, IWGO 2019, Columbus, OH, Aug. 2019.

Y. Zhang, Z. Feng, A Bhuiyan, M. Karim, H. Zhao, “High temperature LPCVD growth of β-Ga2O3 films”, IWGO 2019, Columbus, OH, Aug. 2019.

Z. Feng, M. Rezaul Karim, A. T. Neal, S. Mou, H. Zhao, “LPCVD growth of Si doped β-Ga2O3 thin films with superior room temperature mobilities” EMC 2019, Ann Arbor, MI, June 2019.

2018

Invited talks:

Chris G. Van de Walle, “First-principles studies of transport and optical properties in sesquioxides”, CECAM Workshop on Reliable and quantitative prediction of defect properties in Ga-based semiconductors, Bremen, Germany, October 8-12, 2018.

(Invited) H. Zhao, “LPCVD of β-Ga2O3: materials and devices”, 2018 E-MRS Fall Meeting, Warsaw, Poland, Sep. 2018.

(Invited) H. Zhao, LPCVD Grown β-Ga2O3: Materials and devices, Advanced Wide Bandgap Materials Technologies, SPIE Optics+Photonics, San Diego, CA, August 2018.

Contributed talks:

J. M. Johnson, Y. Zhang, M. Rezaul Karim, H. Zhao, S. Rajan, J. Hwang, “Scanning Transmission Electron Microscopy of Gallium Oxide Materials and Interfaces”, MRS Fall meeting, Nov. 2018.

Jared M. Johnson, Yuewei Zhang, Reza Karim, Hongping Zhao, Siddharth Rajan, and Jinwoo Hwang, “Scanning transmission electron microscopy of gallium oxide materials and interfaces”, Materials Research Society Fall Meeting, Boston, MA, USA, December 2018

Jared M. Johnson, Subrina Rafique, Hongping Zhao, and Jinwoo Hwang, “Characterization of point and extended defects in β-Ga2O3” International Materials Congress 2018, September 2018.