Publications

Publication list from the team:

GAME MURI-supported publications:

2019

Fikadu Alema, Brian Hertog, Partha Mukhopadhyay, Yuewei Zhang, Akhil Mauze, Andrei Osinsky, Winston V. Schoenfeld, James S. Speck, and Timothy Vogt, “Solar blind Schottky photodiode based on an MOCVD-grown homoepitaxial β-Ga2O3 thin film”, APL Materials 7, 022527 (2019).

(Editor’s Pick) A F M A. U. Bhuiyan, Z. Feng, J. M. Johnson, Z. Chen, H. -L. Huang, J. Hwang, H. Zhao, “MOCVD epitaxy of β-(AlxGa1-x)2O3 thin films on (010) Ga2O3 substrates and N-type doping”, Appl. Phys. Lett., 115, 120602 (2019).

D. Biswas, C. Joishi, J. Biswas, K. Thakar, S. Rajan, and S. Lodha," Enhanced n-type beta-Ga2O3 ((2)over-bar01)gate stack performance using Al2O3/SiO2 bi-layer dielectric", Applied Physics Letters, 114 212106 (2019).

I. Chatratin, F. P. Sabino, P. Reunchan, S. Limpijumnong, J. B. Varley, C. G. Van de Walle, and A. Janotti, “Role of point defects in the electrical and optical properties of In2O3”, Phys. Rev. Mater. 3, 074604 (2019).

Z. Cheng, N. Tanen, C. Chang, J. J. Shi, J. McCandless, D. Muller, D. Jena, H. G. Xing, and S. Graham," Significantly reduced thermal conductivity in beta-(Al0.1Ga0.9)(2)O-3/Ga2O3 superlattices", Applied Physics Letters, 115 4 (2019).

Z. Cheng, L. Yates, J. Shi, M. Tadjer, K. Hobart, S. Graham, "Thermal Conductance across β-Ga2O3-diamond van der Waals Heterogeneous Interfaces", APL materials 7(3), 031118, 2019.

E. Farzana, A. Mauzi, J. B. Varley, T. Blue, J. S. Speck, A. R. Arehart, and S. A. Ringel, “Influence of Neutron Irradiation on Deep Levels in Ge-doped (010) β-Ga2O3 layers grown by plasma-assisted molecular beam epitaxy,” APL Materials 7, 121102 (2019).

E. Farzana, M. F. Chaiken, T. E. Blue, A. R. Arehart, and S. A. Ringel," Impact of deep level defects induced by high energy neutron radiation in beta-Ga2O3", APL Materials, 7 022502 (2019).

(Featured Article) Z. Feng, A F M A. U. Bhuiyan, M. R. Karim, H. Zhao, “MOCVD homoepitaxy of Si-doped (010) β-Ga2O3 thin films with superior transport properties”, Appl. Phys. Lett., 114, 250601, 2019.Highlighted: Scilight 2019, 260009 (2019);

Matthew Hilfiker, Ufuk Kilic, Alyssa Mock, Vanya Darakchieva, Sean Knight, Rafał Korlacki1, Akhil Mauze, Yuewei Zhang, James Speck, and Mathias Schubert, “Dielectric function tensor (1.5 eV to 9.0 eV), anisotropy, and band to band transitions of monoclinic β-(AlxGa1-x)2O3 (x ≤ 0.21) films”, Applied Physics Letters 114, 231901 (2019).

Jared M. Johnson, Zhen Chen, Joel B. Varley, Christine M. Jackson, Esmat Farzana, Zeng Zhang, Aaron R. Arehart, Hsien-Lien Huang, Arda Genc, Steven A. Ringel, Chris G. Van de Walle, David A. Muller, and Jinwoo Hwang, "Unusual formation of point defect complexes in the ultra-wide band gap semiconductor β-Ga2O3", Physical Review X 9, 041027 (2019).

N. K. Kalarickal, Z. B. Xia, J. McGlone, S. Krishnamoorthy, W. Moore, M. Brenner, A. R. Arehart, S. A. Ringel, and S. Rajan," Mechanism of Si doping in plasma assisted MBE growth of beta-Ga2O3", Applied Physics Letters, 115 152106 (2019).

N. Kumar, C. Joishi, Z. B. Xia, S. Rajan, S. Kumar, “Electro-thermal Simulation of Delta-doped beta-Ga2O3 Field Effect Transistors”, in Proceedings of the 2019 Eighteenth IEEE Intersociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems (IEEE, New York, 2019), pp. 370.

Nitish Kumar, Chandan Joishi, Zhanbo Xia, Sidhharth Rajan, Satish Kumar, “Electrothermal Characteristics of Delta-Doped β-Ga₂O₃ Metal-Semiconductor Field-Effect Transistors”, IEEE TED 2019.

A Mauze, Y Zhang, T Mates, F Wu, JS Speck, “Investigation of unintentional Fe incorporation in (010) β-Ga2O3 films grown by plasma-assisted molecular beam epitaxy”, Applied Physics Letters 115 (5), 052102 (2019). (Editors’ pick)

(Editor’s Pick) Baishakhi Mazumder, Jith Sarkar, Yuewei Zhang, Jared M. Johnson, Menglin Zhu, Siddharth Rajan, and Jinwoo Hwang, "Atomic scale investigation of chemical heterogeneity in β-(AlxGa1-x)2O3 films using atom probe tomography", Appl. Phys. Lett. 115, 132105 (2019).

Joe F. McGlone, Zhanbo Xia, Chandan Joishi, Saurabh Lodha, Siddharth Rajan, Steven Ringel, and Aaron R. Arehart, "Identification of critical buffer traps in Si δ-doped β-Ga2O3 MESFETs", Appl. Phys. Lett. 115, 153501 (2019).

H. Peelaers, E. Kioupakis, and C. G. Van de Walle, “Limitations of In2O3 as a transparent conducting oxide”, Appl. Phys. Lett. 115, 082105 (2019)

H. Peelaers, J. L. Lyons, J. B. Varley, and C. G. Van de Walle," Deep acceptors and their diffusion in Ga2O3", APL Materials, 7 022519 (2019).

H. Peelaers and C. G. Van de Walle," Phonon- and charged-impurity-assisted indirect free-carrier absorption in Ga2O3", Physical Review B, 100 081202 (2019).

M. Rezaul Karim, Z. Feng, J. M. Johnson, M. Zhu, J. Hwang, H. Zhao, “Low Pressure Chemical Vapor Deposition of In2O3 films on off-axis c-sapphire Substrates”, Cryst. Growth Des., 19 (3), pp. 1965–1972, 2019.

Y. Zhang, M. Rezaul Karim, Z. Feng, H. Zhao, “Ultrafast Growth Rate and High Mobility In2O3 Films Grown on C-Sapphire via Low Pressure Chemical Vapor Deposition”, J. Appl. Phys., 125, 135703, 2019.

Yuewei Zhang, Akhil Mauze, and James S. Speck, “Anisotropic etching of β-Ga2O3 using hot phosphoric acid”, Applied Physics Letters 115 (1), 013501 (2019).

Yuewei Zhang, Akhil Mauze, Fikadu Alema, Andrei Osinsky, and James S. Speck, “Near unity ideality factor for sidewall Schottky contacts on un-intentionally doped β-Ga2O3”, Applied Physics Express 12, 044005 (2019).

(Featured Article) Yuewei Zhang, Fikadu Alema, Akhil Mauze, Onur S. Koksaldi, Ross Miller, Andrei Osinsky, and James S. Speck, “MOCVD grown epitaxial β-Ga2O3 thin film with an electron mobility of 176 cm2/Vs at room temperature”, APL Materials 7, 022506 (2019).

Relevant publications from the team:

2019

Jith Sarker, Yuewei Zhang, Menglin Zhu, Siddharth Rajan, Jinwoo Hwang, Baishakhi Mazumder, “Understanding the Growth Mechanism of β-(AlxGa1−x)2O3 by Atom Probe Tomography”, Microscopy and Microanalysis, 25 (S2), 2508 (2019).

Adrian Chmielewski, Parivash Moradifar, Leixin Miao, Kleyser A Lopez, Yuewei Zhang, Akhil Mauze, James S Speck, Nasim Alem, “Investigation of the Atomic and Electronic Structure of β-(Al0.2Ga0.8)2O3 Alloys by STEM-EELS”, Microscopy and Microanalysis, 25 (S2), 2186 (2019).

A. S. Pratiyush, S. Krishnamoorthy, R. Muralidharan, S. Rajan, and D. N. Nath, Advances in Ga2O3 solar-blind UV photodetectors. (Elsevier Science Bv, Amsterdam, 2019), pp.369.

Chandan Joishi, Yuewei Zhang, Zhanbo Xia, Wenyuan Sun, Aaron R Arehart, Steven Ringel, Saurabh Lodha, Siddharth Rajan, “Breakdown characteristics of β-(Al0.22Ga0.78)2O3/Ga2O3 field-plated modulation doped field effect transistors with SiNx passivation”, IEEE Electron Device Letters (2019).

Yuewei Zhang, Zhanbo Xia, Joe McGlone, Wenyuan Sun, Chandan Joishi, Aaron R Arehart, Steven A. Ringel, and Siddharth Rajan, “Evaluation of Saturation Velocity in β-(AlxGa1-x)2O3/Ga2O3 Modulation-doped Field Effect Transistors”, IEEE TED, 66, 1574 (2019).

2018

Y. Oshima, E. Ahmadi, S. Kaun, F. Wu, and J. S. Speck," Growth and etching characteristics of (001) beta-Ga2O3 by plasma-assisted molecular beam epitaxy", Semiconductor Science and Technology, 33 015013 (2018).

S. H. Han, A. Mauze, E. Ahmadi, T. Mates, Y. Oshima, and J. S. Speck," n-type dopants in (001) beta-Ga2O3 grown on (001) beta-Ga2O3 substrates by plasma-assisted molecular beam epitaxy", Semiconductor Science and Technology, 33 045001 (2018).

P. Vogt, A. Mauze, F. Wu, B. Bonef, and J. S. Speck," Metal-oxide catalyzed epitaxy (MOCATAXY): the example of the O plasma-assisted molecular beam epitaxy of beta-(Al-x,Ga1-x)(2)O-3/beta-Ga2O3 heterostructures", Applied Physics Express, 11 115503 (2018).

O. Koksal, N. Tanen, D. Jena, H. L. Xing, and F. Rana," Measurement of ultrafast dynamics of photoexcited carriers in beta-Ga2O3 by two-color optical pump-probe spectroscopy", Applied Physics Letters, 113 252102 (2018).

A. T. Neal, S. Mou, S. Rafique, H. P. Zhao, E. Ahmadi, J. S. Speck, K. T. Stevens, J. D. Blevins, D. B. Thomson, N. Moser, K. D. Chabak, and G. H. Jessen," Donors and deep acceptors in beta-Ga2O3", Applied Physics Letters, 113 062101 (2018).

(Featured Article) Yuewei Zhang, Adam Neal, Zhanbo Xia, Chandan Joishi, Jared M. Johnson, Yuanhua Zheng, Sanyam Bajaj, Mark Brenner, Donald Dorsey, Kelson Chabak, Gregg Jessen, Jinwoo Hwang, Shin Mou, Joseph P. Heremans, and Siddharth Rajan, “Demonstration of high mobility and quantum transport in modulation-doped β-(AlxGa1-x)2O3/Ga2O3 heterostructures”, Appl. Phys. Lett. 112, 173502 (2018).

E. Farzana, E. Ahmadi, J. S. Speck, A. Arehart, and S. Ringel, “Deep level defects in Ge-doped (010) β-Ga2O3 layers grown by plasma-assisted molecular beam epitaxy”, Journal of Applied Physics 123 (16), 161410 (2018).

J. F. McGlone, Z. Xia, Y. Zhang, C. Joishi, S. Lodha, S. Rajan, S. Ringel, and A. Arehart, “Trapping Effects in Si δ-Doped β-Ga2O3 MESFETs on an Fe-Doped β-Ga2O3 Substrate,” IEEE Electron Device Letters 39, 1042 (2018).

C. Joishi, Z. Xia, J. McGlone, Y. Zhang, A. R. Arehart, S. Ringel, S. Lodha, and S. Rajan, “Effect of buffer iron doping on delta-doped β-Ga2O3 metal semiconductor field effect transistors,” Applied Physics Letters 113 (12), 123501 (2018).

E. Farzana, M. Chaiken, T. Blue, A. R. Arehart, and S. A. Ringel, “Impact of deep level defects induced by high energy neutron radiation in β-Ga2O3”, APL Materials 7 (2), in press (2018).

H. Peelaers, J. B. Varley, J. S. Speck, and C. G. Van de Walle, “Structural and electronic properties of Ga2O3-Al2O3 alloys”, Appl. Phys. Lett. 112, 242101 (2018). [doi:10.1063/1.5036991]

J. Y. Tsao, S. Chowdhury, M. A. Hollis, D. Jena, N. M. Johnson, K. A. Jones, R. J. Kaplar, S. Rajan, C. G. Van de Walle, E. Bellotti, C. L. Chua, R. Collazo, M. E. Coltrin, J. A. Cooper, K. R. Evans, S. Graham, T. A. Grotjohn, E. R. Heller, M. Higashiwaki, M. S. Islam, P. W. Juodawlkis, M. A. Khan, A. D. Koehler, J. H. Leach, U. K. Mishra, R. J. Nemanich, R. C. N. Pilawa-Podgurski, J. B. Shealy, Z. Sitar, M. J. Tadjer, A. F. Witulski, M. Wraback, and J. A. Simmons," Ultrawide-Bandgap Semiconductors: Research Opportunities and Challenges", Advanced Electronic Materials, 4 1600501 (2018).

Subrina Rafique, Md Rezaul Karim, Jared Johnson, Jinwoo Hwang and Hongping Zhao, “LPCVD homoepitaxy of Si doped β-Ga2O3 thin films on (010) and (001) substrates”, Appl. Phys. Lett. 112, 052104 (2018).

S. Rafique, L. Han, A. T. Neal, S. Mou, J. Boeckl, and H. P. Zhao," Towards High-Mobility Heteroepitaxial beta-Ga2O3 on Sapphire - Dependence on The Substrate Off-Axis Angle", Physica Status Solidi a-Applications and Materials Science, 215 1700467 (2018).

Yuewei Zhang, Chandan Joishi, Zhanbo Xia, Mark Brenner, Saurabh Lodha, Siddharth Rajan, “Demonstration of β-(AlxGa1-x)2O3/Ga2O3 double heterostructure field effect transistors”, Applied Physics Letters 112, 233503 (2018). (Featured in Editor’s Picks)

Anamika Singh Pratiyush, Zhanbo Xia, Sandeep Kumar, Yuewei Zhang, Chandan Joishi, Rangarajan Muralidharan, Siddharth Rajan, Digbijoy N Nath, “MBE-Grown-Ga2O3-Based Schottky UV-C Photodetectors With Rectification Ratio ~107”, IEEE Photonics Technology Letters 30, 2025 (2018).

Zhanbo Xia, Chandan Joishi, Sriram Krishnamoorthy, Sanyam Bajaj, Yuewei Zhang, Mark Brenner, Saurabh Lodha, Siddharth Rajan, “Delta doped β-Ga2O3Field Effect Transistors with Regrown Ohmic Contacts”, IEEE Electron Device Letters, DOI: 10.1109/LED.2018.2805785 (2018).

Chandan Joishi, Subrina Rafique, Zhanbo Xia, Lu Han, Sriram Krishnamoorthy, Yuewei Zhang, Saurabh Lodha, Hongping Zhao and Siddharth Rajan, “Low-pressure CVD-grown β-Ga2O3 bevel-field-plated Schottky barrier diodes”, Applied Physics Express 11 (3), 031101 (2018).

H. T. Gao, S. Muralidharan, N. Pronin, M. R. Karim, S. M. White, T. Asel, G. Foster, S. Krishnamoorthy, S. Rajan, L. R. Cao, M. Higashiwaki, H. Von Wenckstern, M. Grundmann, H. P. Zhao, D. C. Look, and L. J. Brillson," Optical signatures of deep level defects in Ga2O3", Applied Physics Letters, 112 242102 (2018).

Z. Y. Hu, K. Nomoto, W. S. Li, N. Tanen, K. Sasaki, A. Kuramata, T. Nakamura, D. Jena, and H. G. Xing," Enhancement-Mode Ga2O3 Vertical Transistors With Breakdown Voltage > 1 kV", Ieee Electron Device Letters, 39 869 (2018).

Z. Y. Hu, K. Nomoto, W. S. Li, Z. X. Zhang, N. Tanen, Q. T. Thieu, K. Sasaki, A. Kuramata, T. Nakamura, D. Jena, and H. G. Xing," Breakdown mechanism in 1 kA/cm(2) and 960 V E-mode beta-Ga2O3 vertical transistors", Applied Physics Letters, 113 122103 (2018).

W. S. Li, Z. Y. Hu, K. Nomoto, R. Jinno, Z. X. Zhang, T. Q. Tu, K. Sasaki, A. Kuramata, D. Jena, H. G. Xing, "2.44 kV Ga2O3 vertical trench Schottky barrier diodes with very low reverse leakage current", in 2018 IEEE International Electron Devices Meeting.

W. S. Li, Z. Y. Hu, K. Nomoto, Z. X. Zhang, J. Y. Hsu, Q. T. Thieu, K. Sasaki, A. Kuramata, D. Jena, and H. G. Xing," 1230 V beta-Ga2O3 trench Schottky barrier diodes with an ultra-low leakage current of <1 mu A/cm(2)", Applied Physics Letters, 113 202101 (2018).

W. S. Li, K. Nomoto, Z. Y. Hu, N. Tanen, K. Sasaki, A. Kuramata, D. Jena, H. G. Xing, "1.5 kV Vertical Ga2O3 Trench-MIS Schottky Barrier Diodes" 1.5 kV Vertical Ga2O3 Trench-MIS Schottky Barrier Diodesin 2018 76th Device Research Conference.

2017

H. Peelaers and C. G. Van de Walle, “Sub-band-gap absorption in Ga2O3”, Appl. Phys. Lett. 111, 182104 (2017). [doi: 10.1063/1.5001323].

E. Ahmadi, Y. Oshima, F. Wu, and J. S. Speck," Schottky barrier height of Ni to beta-(AlxGa(1-x)) O-2(3) with different compositions grown by plasma-assisted molecular beam epitaxy", Semiconductor Science and Technology, 32 035004 (2017).

E. Ahmadi, O.S. Koksaldi, S.W. Kaun, Y.Oshima, D.B. Short, U.K. Mishra, and J.S. Speck, “Ge doping of β-Ga₂O₃ films grown by plasma-assisted molecular beam epitaxy,” Appl. Phys. Express 10, 041102 (2017).

Sriram Krishnamoorthy, Zhanbo Xia, Sanyam Bajaj, Mark Brenner, and Siddharth Rajan, “Delta-doped β-gallium oxide field-effect transistor,” Appl. Phys. Express 10, 051102 (2017).

S. Krishnamoorthy, Z. B. Xia, C. Joishi, Y. W. Zhang, J. McGlone, J. Johnson, M. Brenner, A. R. Arehart, J. W. Hwang, S. Lodha, and S. Rajan," Modulation-doped beta-(Al0.2Ga0.8)(2)O-3/Ga2O3 field-effect transistor", Applied Physics Letters, 111 023502 (2017).

E. Farzana, E. Ahmadi, J.S. Speck, A.R. Arehart and S.A. Ringel, “Deep level defects in Ge-doped (010) β-Ga2O3 layers grown by plasma-assisted molecular beam epitaxy,” submitted for publication, J. Appl. Phys (2017).

E. Farzana, Z. Zhang, P. K. Paul, A. R. Arehart, and S. A. Ringel," Influence of metal choice on (010) beta-Ga2O3 Schottky diode properties", Applied Physics Letters, 110 202102 (2017).

N. Moser, J. McCandless, A. Crespo, K. Leedy, A. Green, A. Neal, S. Mou, E. Ahmadi, J. Speck, K. Chabak, N. Peixoto, and G. Jessen," Ge-Doped beta-Ga2O3 MOSFETs", Ieee Electron Device Letters, 38 775 (2017).

J.M. Johnson, S. Im, W. Windl, and J. Hwang. “Three-dimensional imaging of individual point defects using selective detection angles in annular dark field scanning transmission electron microscopy.” Ultramicroscopy 172, 17 (2017).

Y. Kang, K. Krishnaswamy, H. Peelaers, and C. G. Van de Walle, “Fundamental limits on the electron mobility of β -Ga2O3”, J. Phys.: Condens. Matter 29, 234001 (2017).

H. Peelaers and C. Van de Walle, “Lack of Quantum Confinement in Ga2O3 Monolayers,” Phys. Rev. B, 96 081409 R (2017).

E. Ahmadi, O.S. Koksaldi, X. Zheng, T. Mates, Y. Oshima, U.K. Mishra, and J.S. Speck “Demonstration of β-(AlxGa1-x)2O3/β-Ga2O3 modulation doped field-effect transistors with Ge as dopant grown via plasma-assisted molecular beam epitaxy,” Appl. Phys. Express 10, 071101 (2017).

Z. B. Xia, C. Joishi, S. Krishnamoorthy, S. Bajaj, Y. W. Zhang, M. Brenner, S. Lodha, and S. Rajan," Delta Doped beta-Ga2O3 Field Effect Transistors With Regrown Ohmic Contacts", Ieee Electron Device Letters, 39 568 (2018).

2016

J. E. Hogan, S. W. Kaun, E. Ahmadi, Y. Oshima, and J. S. Speck," Chlorine-based dry etching of beta-Ga2O3", Semiconductor Science and Technology, 31 065006 (2016).

Z. Zhang, E. Farzana, A. R. Arehart, and S. A. Ringel, “Deep level defects throughout the bandgap of (010) β-Ga2O3 detected by optically and thermally stimulated defect spectroscopy”, Applied Physics Letters 108, 052105 (2016).

H. Peelaers and C. G. Van de Walle, “Doping of Ga2O3 with transition metals”, Phys. Rev. B 94, 195203 (2016). [doi: 10.1103/PhysRevB.94.195203]

Y. Oshima, E. Ahmadi, S. Badescu, F. Wu, and J. Speck, “Composition determination of β-(AlxGa1-x)2O3 layers coherently grown on (010) β-Ga2O3 substrates by high-resolution x-ray diffraction,” Appl. Phys. Express 9, 061102 (2016).

S. Rafique, L. Han, M. J. Tadjer, J. A. Freitas Jr, N. A. Mahadik, H Zhao, “Homoepitaxial growth of β-Ga2O3 thin films by low pressure chemical vapor deposition”, Appl. Phys. Lett. 108, 182105 (2016).

S. Rafique, L. Han, S. Mou, and H. P. Zhao," Temperature and doping concentration dependence of the energy band gap in beta-Ga2O3 thin films grown on sapphire", Optical Materials Express, 7 3561 (2017).

S. Rafique, L. Han, A. T. Neal, S. Mou, M. J. Tadjer, R. H. French, H. Zhao, “Heteroepitaxy of N-type β-Ga2O3 thin films on sapphire substrate by low pressure chemical vapor deposition” Appl. Phys. Lett. 109, 132103 (2016).

N. Ma, N. Tanen, A. Verma, Z. Guo, H. Xing, and D. Jena, “Intrinsic electron mobility limits in β-Ga2O3”, Appl. Phys. Lett. 109, 212101 (2016).

2015 and earlier

H. Peelaers, and C.G. Van de Walle. “Brillouin zone and band structure of β-Ga2O3.” phys. stat. sol. B 252, 828 (2015).

H. Peelaers, D. Steiauf, J. B. Varley, A. Janotti, and C. G. Van de Walle, “(InxGa1-x)2O3 alloys for transparent electronics,” Phys. Rev. B 92, 085206 (2015).

S. Kaun, F. Wu, J. Speck, “β-(AlxGa1−x)2O3/Ga2O3 (010) heterostructures grown on β-Ga2O3 (010) substrates by plasma-assisted molecular beam epitaxy,” J. Vac. Sci. Tech. A 33, 041508 (2015).

W. S. Hwang, A. Verma, H. Peelaers, V. Protasenko, S. Rouvimov, H.G. Xing, A. Seabaugh, W. Haensch, C. Van De Walle, Z. Galazka, M. Albrecht, R. Fornari, and D. Jena, “High-voltage field effect transistors with wide-bandgap β-Ga2O3 nanomembranes,” Appl. Phys. Lett. 104, 203111 (2014).

Hironori Okumura, Masao Kita, Kohei Sasaki, Akito Kuramata, Masataka Higashiwaki, and James S. Speck, “Systematic investigation of the growth rate of β-Ga2O3 (010) by plasma-assisted molecular beam epitaxy,” Appl. Phys. Express 7, 095501 (2014).

Ting-Hsiang Hung, Kohei Sasaki, Akito Kuramata, Digbijoy N. Nath, Pil Sung Park, Craig Polchinski, and Siddharth Rajan, “Energy band line-up of atomic layer deposited Al2O3 on β-Ga2O3,” Appl. Phys. Lett. 104, 162106 (2014).

Oliver Bierwagen, Mark E. White, Min-Ying Tsai, and James S. Speck, in “MBE of transparent semiconducting oxides,” Molecular Beam Epitaxy: from Research to Mass Production, (Ed. M. Henini, Elsevier, 2013) p. 347-367.

J.B. Varley, A. Janotti, C. Franchini, and C.G. Van de Walle. “Role of self-trapping in luminescence and p-type conductivity of wide-band-gap oxides.” Phys. Rev. B 85, 81109 (2012).

J. Varley, A. Janotti, C. Franchini, and C. G. Van de Walle, “Role of self-trapping in luminescence and p-type conductivity of wide-band-gap oxides”, Phys. Rev. B 85, 081109 (2012). [doi: 10.1103/PhysRevB.85.081109]

J.B. Varley, H. Peelaers, A. Janotti, and C.G. Van de Walle. “Hydrogenated cation vacancies in semiconducting oxides,” J. Phys. Cond. Mat. 23, 334212 (2011).

C. Janowitz, V. Scherer, M. Mohamed, A. Krapf, H. Dwelk, R. Manzke, Z. Galazka, R. Uecker, K. Irmscher, R. Fornari, M. Michling, D. Schmeier, J. R Weber, J. B Varley, and C. G Van de Walle, “Experimental electronic structure of In2O3 and Ga2O3”, New J. Phys. 13, 085014 (2011). [doi:10.1088/1367-2630/13/8/085014]

M. Mohamed, C. Janowitz, I. Unger, R. Manzke, Z. Galazka, R. Uecker, R. Fornari, J. R. Weber, J. B. Varley, and C. G. Van de Walle, “The electronic structure of β-Ga2O3”, Appl. Phys. Lett. 97, 211903 (2010). [doi:10.1063/1.3521255]

Min-Ying Tsai, Oliver Bierwagen, Mark E. White and James S. Speck, “β-Ga2O3 growth by plasma-assisted molecular beam epitaxy,” J. Vac. Sci. Tech. A28, 354 (2010).

J.B. Varley, J. R. Weber, A. Janotti, C. G. Van de Walle, “Oxygen vacancies and donor impurities in β-Ga2O3”, Appl. Phys., Lett. 97, 142106 (2010).