Research Areas
Growth Science
The GAME MURI team has core expertise in epitaxial growth. We will build on these significant strengths and pursue a comprehensive program across growth methods, orientations, and alloy compositions to realize the full potential of the β-Ga2O3 materials system. Epitaxy methods including MBE, MOCVD, and LPCVD will be investigated to realize excellent crystal quality.
Defect Science
We will develop deep understanding of the formation, physical structure, electronic and optical properties of defects, and their influence on large-scale transport properties (thermal, electronic). The study includes the advancement in growth science, defect spectroscopy and scanning- transmission electron microscopy imaging.
Transport and Optical Properties
The transport of electron, photon and phonon waves in β-Ga2O3 servers as sensitive probes for the understanding of materials science, defects, and the underlying physics of electron-phonon, electron-photon, and photon-phonon couplings. Comprehensive exploration of the transport properties in β-Ga2O3 will be developed to determine the limits of electronic, optical, and thermal conductivity in this material family and its heterostructures, creating the foundation of its usage in electronic, photonic, and thermoelectric applications.
Alloys and Interfaces
A mature understanding of the synthesis and properties of dielectric/semiconductor interfaces, alloys, and heterostructures will be critical in enabling future technologies based on β-Ga2O3. We will investigate the growth science, interfacial properties, transport and band structures of the heterostructures.
